Memristor-based memory: The sneak paths problem and solutions
نویسندگان
چکیده
In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.
منابع مشابه
IRWIN AND JOAN JACOBS CENTER FOR COMMUNICATION AND INFORMATION TECHNOLOGIES Information-Theoretic Sneak- Path Mitigation in Memristor Crossbar Arrays
In a memristor crossbar array, functioning as a memory array, a memristor is positioned on each row-column intersection, and its resistance, low or high, represents two logical states. The state of every memristor can be sensed by the current flowing through the memristor. In this work, we study the sneak path problem in crossbar arrays, in which current can sneak through other cells, resulting...
متن کاملSingle-Readout High-Density Memristor Crossbar
High-density memristor-crossbar architecture is a very promising technology for future computing systems. The simplicity of the gateless-crossbar structure is both its principal advantage and the source of undesired sneak-paths of current. This parasitic current could consume an enormous amount of energy and ruin the readout process. We introduce new adaptive-threshold readout techniques that u...
متن کاملPilot assisted readout for passive memristor crossbars
The high demands for performance and energy efficiency pose significant challenges for computational systems. Memristor-based crossbar architectures are actively considered as vital rivals for the traditional solutions. Nonetheless, density and energy driven passive array structures, that lack a switching control per cell, suffer from sneak paths that limit the range of accurate operation of th...
متن کاملNano crossbar array of Complementary Resistive Switches with nonlinear memristive characteristics
Emerging solid state memory devices based on different materials and volatility has been widely acknowledged like NVRAMs (or Memristor).Evolution of new solid state ionic conductors and in particular (Memristor) brought impetus to the creation of new domain of larger storage capabilities for the future electronic systems. The achievements of these emerging technologies are kind of encouraging w...
متن کاملDesigning a Fast and Reliable Main Memory with Memristor Technology
Several memory vendors are pursuing different kinds of memory cells that can offer high density, non-volatility, high performance, and high endurance. In this work, we focus on Memristor technology and identify some of the significant problems in state-of-the-art implementations. These problems include sneak currents during reads and non-uniformity in cell behavior within an array. These proble...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Microelectronics Journal
دوره 44 شماره
صفحات -
تاریخ انتشار 2013